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Broadcast power is said to depend upon the development of ultrafast diodes.

J. Appl. Phys. 108, 084316 (2010); http://dx.doi.org/10.1063/1.3501051 (3 pages)

Graphene-based ultrafast diode

D. Dragoman¹, M. Dragoman², and R. Plana³

¹Department of Physics, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania
²National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B, 077190 Bucharest, Romania
³LAAS CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France

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(Received 27 July 2010; accepted 9 September 2010; published online 27 October 2010)                 

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We present a graphene-based ballistic diode, which is able to rectify an incident signal due to an oblique gate positioned between the two terminals of the device. The operating point of the diode can be controlled by the applied gate voltage, whereas the current-voltage dependence of the device can be changed by varying the inclination angle of the gate. In particular, the ideality factor of the graphene-based diode can take values higher or lower than 1 by modifying this inclination angle. The rectifying properties of the graphene diode are thus tunable, in deep contrast with semiconductor-based diodes.

© 2010 American Institute of Physics

Article Outline

1. INTRODUCTION
2. SCHOTTKY-LIKE DIODE ON GRAPHENE
3. CONCLUSION